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| Multi TOPLED(R) Cathodes On One Side Besondere Merkmale q Gehausebauform: P-LCC-4 q Gehausefarbe: wei q als optischer Indikator einsetzbar q zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung q beide Leuchtdiodenchips getrennt ansteuerbar q hohe Signalwirkung durch Farbwechsel der LED moglich q bei geeigneter Ansteuerung, Farbwechsel von grun uber gelb und orange bis super-rot moglich q fur alle SMT-Bestuck- und Lottechniken geeignet q gegurtet (8-mm-Filmgurt) q Storimpulsfest nach DIN 40839 Features P-LCC-4 package color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses both chips can be controlled separately high signal efficiency possible by color change of the LED with appropriate controlling it is possible to change color from green to yellow and orange to super-red q suitable for all SMT assembly and soldering methods q available taped on reel (8 mm tape) q load dump resistant acc. to DIN 40839 q q q q q q q LSG T677 Typ Type Emissionsfarbe Color of Emission Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear Lichtstarke Luminous Intensity IF = 10 mA IV(mcd) 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 20.0 Lichtstrom Luminous Flux IF = 10 mA V (mlm) 18 (typ.) 30 (typ.) - Bestellnummer Ordering Code LSG T677-HK LSG T677-J LSG T677-K LSG T677-JL super-red / green Q62703-Q3370 Q62703-Q3371 Q62703-Q3372 Q62703-Q3373 Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0.1) Streuung der Lichtstarke in einer LED IV max / IV min 3.0. 1) Bei MULTILED(R) bestimmt die Helligkeit des jeweils dunkleren Chips in einem Gehause die Helligkeitsgruppe der LED. Luminous intensity ratio in one packaging unit IV max / IV min 2.0.1) Luminous intensity ratio in one LED IV max / IV min 3.0. 1) In case of MULTILED(R), the brightness of the darker chip in one package determines the brightness group of the LED. Semiconductor Group 1 11.96 VPL06837 LSG T677 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation Symbol Wert Symbol Value Einheit Unit C C C mA A Top Tstg Tj IF IFM - 55 ... + 100 - 55 ... + 100 + 100 30 0.5 VR Ptot 5 100 V mW Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-Board*) (Padgroe 16 mm 2) Rth JA1) mounted on PC board*) (pad size 16 mm 2) Rth JA2) *) PC-board: FR4 1) nur ein Chip betrieben 2) beide Chips betrieben 1) 2) 480 650 K/W K/W one system on both systems on simultaneously Notes Die angegebenen Grenzdaten gelten fur einen Chip. The stated maximum ratings refer to one chip. Semiconductor Group 2 LSG T677 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) 635 Wert Value LG 565 Einheit Unit nm 628 570 nm Spektrale Bandbreite bei 50 % Irel max (typ.) Spectral bandwidth at 50 % Irel max (typ.) IF = 10 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 s, RL = 50 2 45 25 nm 120 2.0 2.6 0.01 10 12 120 2.0 2.6 0.01 10 15 Grad deg. V V A A pF (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 (typ.) tr (typ.) tf 300 150 450 200 ns ns Semiconductor Group 3 LSG T677 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 4 LSG T677 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV / IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom IF = f (TA) Max. permissible forward current Semiconductor Group 5 LSG T677 Wellenlange der Stahlung peak = f (TA) Wavelength at peak emission IF = 10 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV / IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 6 LSG T677 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) L LED S Cathode: pin 1 G Cathode: pin 4 T677 Emission color 1 Emission color 2 Package GPL06925 Semiconductor Group 7 |
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